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trenchfet power mosfet rohs
sud50p10-43 vishay siliconix new product document number: 73445 s?60311?rev. b, 27-feb-06 www.vishay.com 1 p-channel 100-v (d-s) 175 c mosfet
v ds (v) r ds(on) ( ) i d (a) a q g (typ) ?100 0.043 at v gs = ?10 v ?38 105 nc to-252 s gd top view drain connected to tab s g d p-channel mosfet ordering information: sud50p10-43?e3 (lead (pb)-free)

parameter symbol limit unit drain-source voltage v ds ?100 v gate-source voltage v gs 20 v t c = 25 c ?38 a continuous drain current (t j = 175 c) t c = 70 c i d ?31.8 a continuous drain current (t j = 175 c) t a = 25 c i d ?9.4 b, c t a = 70 c ?7.8 b, c a pulsed drain current i dm ?50 a continuous source drain diode current t c = 25 c i s ?50 a continuous source-drain diode current t a = 25 c i s ?6.9 b, c avalanche current l=01mh i as ?40 single-pulse avalanche energy l = 0.1 mh e as 80 mj t c = 25 c 136 maximum power dissipation t c = 70 c p d 95 w maximum power dissipation t a = 25 c p d 8.3 b, c w t a = 70 c 5.8 b, c operating junction and storage temperature range t j , t stg ?50 to 175 c parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 sec r thja 15 18 c/w maximum junction-to-case (drain) steady state r thjc 0.85 1.1 c/w notes: a. package limited. b. surface mounted on 1? x 1? fr4 board. c. t = 10 sec. d. maximum under steady state conditions is 40 c/w.
sud50p10-43 vishay siliconix new product www.vishay.com 2 document number: 73445 s?60311?rev. b, 27-feb-06

parameter symbol test condition min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = ?250 a ?100 v v ds temperature coefficient v ds /t j i d = 250 a ?105 mv/ c v gs(th) temperature coefficient v gs(th) /t j i d = ?250 a 7 mv/ c gate-source threshold voltage v gs(th) v ds = v gs , i d = ?250 a ?2 ?3 ?4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ?100 v, v gs = 0 v ?1 a zero gate voltage drain current i dss v ds = ?100 v, v gs = 0 v, t j = 55 c ?10 a on-state drain current a i d(on) v ds 5 v, v gs = ?10 v ?35 a drain-source on-state resistance a r ds(on) v gs = ?10 v, i d = ?9.4 a 0.036 0.043 forward transconductance a g fs v ds = ?15 v, i d = ?9.4 a 30 s dynamic b input capacitance c iss 5230 output capacitance c oss v ds = ?50 v, v gs = 0 v, f = 1 mhz 230 pf reverse transfer capacitance c rss 165 total gate charge q g 105 160 gate-source charge q gs v ds = ?50 v, v gs = ?10 v, i d = ?9.4 a 21 nc gate-drain charge q gd ds gs d 29 gate resistance r g f = 1 mhz 4.1 turn-on delay time t d(on) 30 50 rise time t r v dd = ?50 v, r l = 6.4 115 175 ns turn-off delay time t d(off) v dd = 50 v , r l = 6 . 4 i d ?7.8 a, v gen = ?10 v, r g = 1 80 120 ns fall time t f 60 90 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ?50 a pulse diode forward current a i sm ?50 a body diode voltage v sd i s = ?7.8 a ?0.8 ?1.2 v body diode reverse recovery time t rr 60 90 ns body diode reverse recovery charge q rr i f = ?7.8 a, di/dt = 100 a/ s, t j = 25 c 180 270 nc reverse recovery fall time t a i f 7.8 a, di/dt 100 a/ s, t j 25 c 48 ns reverse recovery rise time t b 12 ns notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
sud50p10-43 vishay siliconix new product document number: 73445 s?60311?rev. b, 27-feb-06 www.vishay.com 3
?55 c 0 5 10 15 20 25 30 35 0 2 4 6 8 10 0 20406080100120 0.5 0.8 1.1 1.4 1.7 2.0 2.3 ?50 ?25 0 25 50 75 100 125 150 175 0 1000 2000 3000 4000 5000 6000 7000 0 20406080100 c oss c iss i d = 9.4 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) r ds(on) ? on-resistance (normalized) 0 4 8 12 16 20 012345 0 5 10 15 20 25 30 35 0.0 0.4 0.8 1.2 1.6 2.0 v gs = 10 thru 6 v 25 c t a = 125 c 4 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d r ds(on) ? on-resistance ( ) v ds = 80 v v ds = 50 v i d = 9.4 a 5 v c rss v gs = 10 v, 6 v 0.035 0.036 0.037 0.038
sud50p10-43 vishay siliconix new product www.vishay.com 4 document number: 73445 s?60311?rev. b, 27-feb-06
0.02 0.03 0.04 0.05 0.06 0.07 0.08 45678910 1.0 1.2 1 10 40 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s on-resistance vs. gate-to-source voltage v gs ? gate-to-source voltage (v) 1.6 1.9 2.2 2.5 2.8 3.1 3.4 ?50 ?25 0 25 50 75 100 125 150 175 i d = 250 a threshold voltage t j ? temperature ( c) 0 20 35 5 10 power (w) time (sec) 25 10 1000 1 0.1 0.01 single pulse power, junction-to-ambient r ds(on) ? drain-to-source on-resistance ( ) v gs(th) (v) safe operating area, junction-to-ambient 100 1 0.1 1 10 1000 0.001 10 ? drain current (a) i d 0.1 *limited by r ds(on) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified t a = 25 c t a = 125 c 15 0.01 100 1 ms 10 ms 100 ms dc 1 s 10 s t a = 25 c single pulse 100 s 30 100
sud50p10-43 vishay siliconix new product document number: 73445 s?60311?rev. b, 27-feb-06 www.vishay.com 5
100 0.000001 0.001 0.01 1 10 0.0001 0 10 20 30 40 50 0 25 50 75 100 125 150 175 current de-rating* i d ? drain current (a) t c ? case temperature ( c) t a ? time in avalanche (sec) single pulse avalanche capability i c ? peak avalanche current (a) *the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the packa ge limit. t a l i a bv
v dd 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 power de-rating t c ? case temperature ( c) power 0.00001
sud50p10-43 vishay siliconix new product www.vishay.com 6 document number: 73445 s?60311?rev. b, 27-feb-06
10 ?3 10 ?2 1 10 ?1 10 ?4 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 10 ?2 1 10 1000 10 ?1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related docu ments such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73445 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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